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| MCC Features * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT2222A Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View 1P B E Min 40 75 6.0 20 10 Max Units Vdc Vdc Vdc nAdc nAdc G NPN General Purpose Amplifier SOT-23 A D Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10Adc, IC=0) Base Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100Adc, VCE=10Vdc, RS=1.0k f=1.0kHz) Delay Time (VCC=30Vdc, VBE=0.5Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX C B F E ON CHARACTERISTICS hFE 35 50 75 100 50 40 H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 300 VCE(sat) 0.3 1.0 0.6 1.2 2.0 Vdc VBE(sat) Vdc DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 300 8.0 25 4.0 MHz pF pF dB .035 .900 Suggested Solder Pad Layout .031 .800 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 10 25 225 60 ns ns ns ns .037 .950 .037 .950 www.mccsemi.com MMBT2222A DC Current Gain vs Collector Current 480 VCE = 5.0V 400 6 320 hFE 240 160 2 80 0 0.1 1 IC (mA) Collector Current vs Collector-Emitter Voltage 250 IB = 4mA 200 IC - (mA) 150 IB = 2mA 600 IB = 3mA PD(MAX) - (mW) 400 800 10 100 10 20 30 IC - (mA) 4 15A 10A 5A 8 35A 30A 25A 20A MCC Collector Current vs Collector-Emitter Voltage 40 50 VCE- (V) Maximum Power Dissipation vs Ambient Temperature TO-92 100 IB = 1mA 200 SOT-23 0 50 0 .5 1.0 VCE - (V) Contours of Constant Gain Bandwidth Product (fT) 24 20 16 VCE - (V) 12 8 4 0 0.1 pF 1.5 2.0 0 50 100 TA - (C) 150 200 Input and Output Capacitance vs Reverse Bias Voltage 12 10 f = 1.0MHz CIB 8 6 COB 4 2 0.1 1.0 10 100 IC - (mA) *50MHz increments from 150 to 250MHz and 260MHz 1.0 Volts - (V) 10 www.mccsemi.com MMBT2222A Base Saturation Voltage vs Collector Current 1.4 1.0 .6 VBE(SAT) - (V) .1 .06 hfe=10 VCE(SAT) - (V) .1 .06 1.4 1.0 .6 MCC Collector Saturation Voltage vs Collector Current IC/IB = 10 hfe=20 TA = 125C TA = 25C .01 1.0 10 IC - (mA) 100 1000 .01 0.1 1.0 10 IC - (mA) 100 Base Saturation Voltage vs Collector Current 14 10 6 VBE(SAT) - (V) 1 0.6 TA=25C VCE(SAT) - (V) .1 .06 IC/IB = 10 4 Collector Saturation Voltage vs Collector Current TA = 25C 1 .6 hfe=20 hfe=10 TA=125C 0.1 1.0 10 IC - (mA) 100 1000 .01 0.1 1.0 10 IC - (mA) 100 Switching Times vs Collector Current 1000 IB1 = IB2 = IC/10 ts 100 T - (ns) tr 10 tf td 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com |
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